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PMP5501Y PDF预览

PMP5501Y

更新时间: 2024-11-14 11:14:07
品牌 Logo 应用领域
安世 - NEXPERIA 放大器光电二极管晶体管
页数 文件大小 规格书
10页 234K
描述
45 V, 100 mA PNP/PNP matched double transistorProduction

PMP5501Y 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
风险等级:5.7外壳连接:ISOLATED
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):175 MHz
Base Number Matches:1

PMP5501Y 数据手册

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PMP5501Y  
45 V, 100 mA PNP/PNP matched double transistor  
28 December 2022  
Product data sheet  
1. General description  
PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device  
(SMD) plastic package.  
PNP/PNP hFE1/hFE2 0.98 complement: PMP5201Y  
NPN/NPN complement: PMP4501Y  
2. Features and benefits  
Current gain matching  
Base-emitter voltage matching  
Application-optimized pinout  
AEC-Q101 qualified  
3. Applications  
Current mirror  
Differential amplifier  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-45  
V
IC  
collector current  
DC current gain  
-
-
-100  
450  
mA  
hFE  
VCE = -5 V; IC = -2 mA; Tamb = 25 °C  
VCE = -5 V; IC = -2 mA; Tamb = 25 °C  
200  
290  
Per device  
hFE1/hFE2  
DC current gain  
matching  
0.95  
-
1
-
-
VBE1−VBE2  
base-emitter voltage  
matching  
2
mV  
 
 
 
 

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