Datasheet > PMFPB8032XP

PMFPB8032XP

更新时间： 2024-11-15 01:18:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	285K
描述
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

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PMFPB8032XP 数据手册

PMFPB8032XP

20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

combination

21 December 2012

Product data sheet

1. General description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench

MOSFET technology and ultra low V_FMaximum Efficiency General Application (MEGA)

Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

1.8 V R_DSonrated for low-voltage gate drive

•

Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm

Exposed drain pad for excellent thermal conduction

Integrated ultra low V_FMEGA Schottky diode

3. Applications

Charging switch for portable devices

DC-to-DC converters

Power management in battery-driven portables

Hard disk and computing power management

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

MOSFET transistor

V_DS

drain-source voltage

T_j= 25 °C

-20

V_GS

gate-source voltage

drain current

-12

I_D

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

[1]

-3.7

Schottky diode

I_F

forward current

reverse voltage

T_sp≤ 105 °C

T_amb= 25 °C

V_R

MOSFET transistor static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -4.5 V; I_D= -2.7 A; T_j= 25 °C

102

mΩ

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