Datasheet > PMEG120G10ELR

PMEG120G10ELR

更新时间： 2023-09-03 20:35:13

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	281K
描述
120 V, 1 A Silicon Germanium (SiGe) rectifierProduction

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PMEG120G10ELR 数据手册

PMEG120G10ELR

120 V, 1 A Silicon Germanium (SiGe) rectifier

1 October 2022

Product data sheet

1. General description

Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

Features

Benefits

•

Low forward voltage and low Q_rr

Extremely low leakage current

Thermal stability up to 175 °C junction temperature

Fast and smooth switching

Low parasitic capacitance

•

Excellent efficiency

Extraordinary safe operating area

Minimal impact on Electro-Magnetic Compatibility (EMC)

allowing simplified certification

3. Applications

•

High-efficiency power conversion

•

Server power supply

Base station power supply

•

Reverse polarity protection

OR-ing

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_sp

167 °C

≤

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

T_j= 25 °C

120

840

I_F= 1 A; T_j= 25 °C; pulsed

V_R= 120 V; T_j= 25 °C; pulsed

V_R= 120 V; T_j= 150 °C; pulsed

[1]

770

0.2

µA

100

[1] Very short pulse, in order to maintain a stable junction temperature.

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

anode

006aab040

CFP3 (SOD123W)

12 3 4 5 6 7...14

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