Datasheet > PMBTA42-Q

PMBTA42-Q

更新时间： 2024-03-03 10:10:50

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	177K
描述
300 V, 100 mA NPN high-voltage transistorProduction

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PMBTA42-Q 数据手册

Nexperia

PMBTA42-Q

300 V, 100 mA NPN high-voltage transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_CBO

collector-base cut-off

current

V_CB= 200 V; I_E= 0 A; T_amb= 25 °C

100

I_EBO

h_FE

emitter-base cut-off

current

V_EB= 6 V; I_C= 0 A; T_amb= 25 °C

100

DC current gain

V_CE= 10 V; I_C= 1 mA; T_amb= 25 °C

V_CE= 10 V; I_C= 10 mA; T_amb= 25 °C

V_CE= 10 V; I_C= 30 mA; T_amb= 25 °C

I_C= 20 mA; I_B= 2 mA; T_amb= 25 °C

V_CEsat

V_BEsat

C_re

collector-emitter

saturation voltage

500

base-emitter saturation

voltage

900

feedback capacitance V_CB= 20 V; I_C= 0 A; i_c= 0 A; f = 1 MHz;

T_amb= 25 °C

f_T

transition frequency

V_CE= 20 V; I_C= 10 mA; f = 100 MHz;

T_amb= 25 °C

MHz

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

3.0

2.8

1.1

0.9

0.45

0.15

2.5 1.4

2.1 1.2

0.48

0.38

0.15

0.09

1.9

Dimensions in mm

18-03-12

Fig. 1. Package outline SOT23

PMBTA42-Q

All information provided in this document is subject to legal disclaimers.

Product data sheet

3 July 2023

3 / 7

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