Datasheet > PM75CSE060_05

PM75CSE060_05

更新时间： 2024-11-18 06:04:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
8页	134K
描述
FLAT-BASE TYPE INSULATED PACKAGE

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中文翻译

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数据手册

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PM75CSE060_05 数据手册

MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOTWPOEWR EMROMDUOLDEUSL>ES>

PM75CPMS7E5C0S6E0060

FLAFTL-ABTA-SBEASTEYPTEYPE

INSIUNLSAUTLEADTEPDACPKAACGKAEGE

PM75CSE060

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.

For example, typical VCE(sat)=1.7V

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

• 3φ 75A, 600V Current-sense IGBT for 15kHz switching

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-

current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 5.5/7.5kW class inverter application

• UL Recognized

Yellow Card No.E80276(N)

File No.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES

Dimensions in mm

110±1

95±0.5

Screwing depth

Min9.0

2-2.54 2-2.54 2-2.54

6-2.54

4-φ5.5

17.02

3.22

10.16 10.16 10.16

MOUNTING HOLES

Terminal code

1. VUPC

2. U

11. VN1

1 2 3

5 6

7 8

12 14 16

11 13 15

12. N

13. U

3. VUP1

4. VVPC

14. V

15. W

16. F

5. V

6. VVP1

7. VWPC

8. W

9. VWP1

10. VNC

φ2.54

0.5±0.3

4-R6

21.2

2-2.54

24.5

3.22

22⁺^–0¹^.^.⁵⁰

0.64

6-M5NUTS

2-φ2.54

67.4

16- 0.64

A : DETAIL

LABEL

Jul. 2005

12 3 4 5 6 7 8

中文翻译

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