Datasheet > PJS50N03_R1_00001

PJS50N03_R1_00001

更新时间： 2024-11-22 01:12:07

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	227K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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PJS50N03_R1_00001 数据手册

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PJS50N03

30V N-CHANNEL ENHANCEMENT MODE MOSFET

30 Volts

2.9 Amperes

CURRENT

VOLTAGE

FEATURES

• R_DS(ON), V_GS@10V,I_D@3.1A< 57 mΩ

• R_DS(ON), V_GS@4.5V,I_D@2.8A< 94 mΩ

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for DC/DC Converters

• Low Gate Charge

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANICAL DATA

• Case: SOT-23 6L Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Apporx. Weight : 0.0003 ounces, 0.0084grams

• Marking : N03

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T_A=25^OC unless otherwise noted )

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_DS

V_GS

+20

Steady-State

T_A=25^OC

I_D

2.9

I_DM

0.7

Power Dissipation (Notes 1)

T_A=25^OC

P_D

Typical Thermal Resistance (Notes 1)

R_θJA

176

^OC/W

^OC

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to + 150

NOTES:

1. Mounted on 7.5cm²FR-4 PCB .

March 19,2012-REV.00

PAGE . 1

12 3 4 5 6

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