Datasheet > PJS6404

PJS6404

更新时间： 2024-11-22 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	264K
描述
30V N-Channel Enhancement Mode MOSFET

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PJS6404 数据手册

PPJS6404

30V N-Channel Enhancement Mode MOSFET

SOT-23 6L-1

Unit : inch(mm)

30 V

6.8A

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@6.8A<32mΩ

 RDS(ON) , VGS@4.5V,ID@4.3A<47mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc..

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 6L-1 Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

 Marking: S04

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

+20

6.8

Continuous Drain Current

Pulsed Drain Current

I_DM

27.2

T_a=25^oC

Derate above 25^oC

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

62.5

December 17,2014-REV.03

Page 1

12 3 4 5 6

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