Datasheet > PJA138K_R2_00001

PJA138K_R2_00001

更新时间： 2024-10-30 12:28:15

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	244K
描述
50V N-Channel Enhancement Mode MOSFET â ESD Protected

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中文翻译

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数据手册

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PJA138K_R2_00001 数据手册

PPJA138K

50V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23

Unit : inch(mm)

50 V

500mA

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@500mA<1.6Ω

 RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω

 RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω

 Advanced Trench Process Technology

 Specially Designed for Battery Operated Systems, Solid-

State Relays Drivers: Relay, Displays, Memories, etc.

 ESD Protected

 Lead free in comply with EU RoHS 2011/65/EU directives.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0003 ounces, 0.0084 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

+20

Continuous Drain Current

Pulsed Drain Current

500

I_DM

1200

500

T_a=25^oC

Derate above 25^oC

mW/ ^oC

^oC

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

250

March 25,2013-REV.00

Page 1

12 3 4 5 6

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