Datasheet > PIMC31PA

PIMC31PA

更新时间： 2024-04-09 19:00:33

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	286K
描述
50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩProduction

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PIMC31PA 数据手册

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PIMC31PA

50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_(BR)CBO

collector-base

breakdown voltage

I_C= 100 µA; I_E= 0 A; T_amb= 25 °C

I_C= 10 mA; I_B= 0 A; T_amb= 25 °C

V_CB= 50 V; I_E= 0 A; T_amb= 25 °C

[1]

V_(BR)CEO

I_CBO

collector-emitter

breakdown voltage

collector-base cut-off

current

100

0.5

0.72

µA

I_CEO

collector-emitter cut-off V_CE= 50 V; I_B= 0 A; T_amb= 25 °C

current

I_EBO

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

h_FE

DC current gain

V_CE= 5 V; I_C= 50 mA; T_amb= 25 °C

I_C= 50 mA; I_B= 2.5 mA; T_amb= 25 °C

[1]

V_CEsat

collector-emitter

100

saturation voltage

V_I(off)

off-state input voltage V_CE= 5 V; I_C= 100 µA; T_amb= 25 °C

on-state input voltage V_CE= 0.3 V; I_C= 20 mA; T_amb= 25 °C

[1]

[2]

0.3

0.4

0.7

0.6

0.8

V_I(on)

1.4

1.3

bias resistor 1 (input)

bias resistor ratio

T_amb= 25 °C

kΩ

R2/R1

TR1 (NPN)

C_c

collector capacitance

transition frequency

V_CB= 10 V; I_E= 0 A; i_e= 0 A; f = 1 MHz;

T_amb= 25 °C

f_T

V_CE= 5 V; I_C= 50 mA; f = 100 MHz;

T_amb= 25 °C

[3]

210

MHz

TR2 (PNP)

C_c

collector capacitance

transition frequency

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

f_T

V_CE= -5 V; I_C= -50 mA; f = 100 MHz;

T_amb= 25 °C

150

MHz

[1] For the PNP transistor with negative polarity.

[2] See section "Test information" for resistor calculation and test conditions.

[3] Characteristics of built-in transistor.

PIMC31PA

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Product data sheet

31 August 2023

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