PIMC31
NXP Semiconductors
500 mA, 50 V NPN/PNP double RET; R1 = 1 kΩ, R2 = 10 kΩ
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
IO
Parameter
Conditions
Min
Max
500
290
Unit
mA
output current
-
-
[1]
[1]
Ptot
total power dissipation
T
amb ≤ 25 °C
amb ≤ 25 °C
mW
Per device
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
T
-
420
mW
°C
Tj
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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500
P
tot
(mW)
400
300
200
100
0
−75
−25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig 1. Power derating curve
6. Thermal characteristics
Table 6.
Symbol
Per transistor
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
431
105
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
298
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PIMC31_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 24 March 2009
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