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PIC18F25K22-I/ML PDF预览

PIC18F25K22-I/ML

更新时间: 2024-11-25 06:03:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 微控制器和处理器外围集成电路时钟
页数 文件大小 规格书
494页 5012K
描述
28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology

PIC18F25K22-I/ML 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN, LCC28,.24SQ,25针数:28
Reach Compliance Code:compliantECCN代码:3A991.A.2
HTS代码:8542.31.00.01Factory Lead Time:18 weeks
风险等级:0.7具有ADC:YES
其他特性:ALSO OPERATES 2.3 V MINIMUM SUPPLY AT 20 MHZ地址总线宽度:
位大小:8CPU系列:PIC
最大时钟频率:64 MHzDAC 通道:YES
DMA 通道:NO外部数据总线宽度:
JESD-30 代码:S-PQCC-N28JESD-609代码:e3
长度:6 mm湿度敏感等级:1
I/O 线路数量:25端子数量:28
片上程序ROM宽度:16最高工作温度:85 °C
最低工作温度:-40 °CPWM 通道:YES
封装主体材料:PLASTIC/EPOXY封装代码:HVQCCN
封装等效代码:LCC28,.24SQ,25封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
RAM(字节):1536ROM(单词):16384
ROM可编程性:FLASH座面最大高度:1 mm
速度:64 MHz子类别:Microcontrollers
最大压摆率:12 mA最大供电电压:5.5 V
最小供电电压:2.7 V标称供电电压:5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:NO LEAD端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:6 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER, RISC
Base Number Matches:1

PIC18F25K22-I/ML 数据手册

 浏览型号PIC18F25K22-I/ML的Datasheet PDF文件第2页浏览型号PIC18F25K22-I/ML的Datasheet PDF文件第3页浏览型号PIC18F25K22-I/ML的Datasheet PDF文件第4页浏览型号PIC18F25K22-I/ML的Datasheet PDF文件第5页浏览型号PIC18F25K22-I/ML的Datasheet PDF文件第6页浏览型号PIC18F25K22-I/ML的Datasheet PDF文件第7页 
PIC18(L)F2X/4XK22  
Data Sheet  
28/40/44-Pin, Low-Power,  
High-Performance Microcontrollers  
with nanoWatt XLP Technology  
2010 Microchip Technology Inc.  
Preliminary  
DS41412A  

PIC18F25K22-I/ML 替代型号

型号 品牌 替代类型 描述 数据表
PIC18LF25K22-I/ML MICROCHIP

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28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology
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28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology
PIC18F24K22-I/ML MICROCHIP

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28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology

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