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PIC16LCR84T-20I/SS PDF预览

PIC16LCR84T-20I/SS

更新时间： 2024-11-04 23:09:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存微控制器可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
124页 1322K
描述
18-pin Flash/EEPROM 8-Bit Microcontrollers

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中文翻译

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PIC16LCR84T-20I/SS 数据手册

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M
PIC16F8X  
18-pin Flash/EEPROM 8-Bit Microcontrollers  
Devices Included in this Data Sheet:  
Pin Diagrams  
• PIC16F83  
• PIC16F84  
PDIP, SOIC  
•1  
RA2  
RA3  
18  
17  
16  
15  
14  
13  
12  
11  
10  
RA1  
• PIC16CR83  
• PIC16CR84  
• Extended voltage range devices available  
(PIC16LF8X, PIC16LCR8X)  
2
3
4
5
6
7
8
9
RA0  
RA4/T0CKI  
MCLR  
VSS  
OSC1/CLKIN  
OSC2/CLKOUT  
VDD  
High Performance RISC CPU Features:  
RB0/INT  
RB1  
RB7  
RB6  
• Only 35 single word instructions to learn  
RB2  
RB5  
• All instructions single cycle except for program  
branches which are two-cycle  
RB3  
RB4  
• Operating speed: DC - 10 MHz clock input  
DC - 400 ns instruction cycle  
Special Microcontroller Features:  
Program  
Memory  
(words)  
Data  
RAM  
(bytes) (bytes)  
Data  
EEPROM Freq  
Max.  
Device  
• In-Circuit Serial Programming (ICSP™) - via two  
pins (ROM devices support only Data EEPROM  
programming)  
(MHz)  
PIC16F83  
PIC16F84  
512 Flash  
1 K Flash  
36  
68  
36  
68  
64  
64  
64  
64  
10  
10  
10  
10  
• Power-on Reset (POR)  
PIC16CR83 512 ROM  
PIC16CR84 1 K ROM  
• Power-up Timer (PWRT)  
• Oscillator Start-up Timer (OST)  
• 14-bit wide instructions  
• 8-bit wide data path  
• Watchdog Timer (WDT) with its own on-chip RC  
oscillator for reliable operation  
• Code-protection  
• 15 special function hardware registers  
• Eight-level deep hardware stack  
• Power saving SLEEP mode  
• Selectable oscillator options  
• Direct, indirect and relative addressing modes  
• Four interrupt sources:  
CMOS Flash/EEPROM Technology:  
- External RB0/INT pin  
- TMR0 timer overflow  
- PORTB<7:4> interrupt on change  
- Data EEPROM write complete  
• Low-power, high-speed technology  
• Fully static design  
• Wide operating voltage range:  
- Commercial: 2.0V to 6.0V  
• 1000 erase/write cycles Flash program memory  
- Industrial:  
2.0V to 6.0V  
• 10,000,000 erase/write cycles EEPROM data mem-  
ory  
• Low power consumption:  
- < 2 mA typical @ 5V, 4 MHz  
- 15 µA typical @ 2V, 32 kHz  
- < 1 µA typical standby current @ 2V  
• EEPROM Data Retention > 40 years  
Peripheral Features:  
• 13 I/O pins with individual direction control  
• High current sink/source for direct LED drive  
- 25 mA sink max. per pin  
- 20 mA source max. per pin  
• TMR0: 8-bit timer/counter with 8-bit  
programmable prescaler  
1998 Microchip Technology Inc.  
DS30430C-page 1  
1234567...124

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