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PIC12F635E/P PDF预览

PIC12F635E/P

更新时间: 2024-01-14 23:22:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存微控制器
页数 文件大小 规格书
196页 3306K
描述
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY

PIC12F635E/P 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.68
具有ADC:NO其他特性:OPERATES AT 2V MINIMUM SUPPLY @ 4 MHZ
地址总线宽度:位大小:8
最大时钟频率:20 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
JESD-30 代码:R-PDSO-G8长度:4.9 mm
I/O 线路数量:6端子数量:8
片上程序ROM宽度:14最高工作温度:85 °C
最低工作温度:-40 °CPWM 通道:NO
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
ROM可编程性:FLASH筛选级别:AEC-Q100
座面最大高度:1.75 mm速度:20 MHz
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.91 mm
uPs/uCs/外围集成电路类型:MICROCONTROLLER, RISCBase Number Matches:1

PIC12F635E/P 数据手册

 浏览型号PIC12F635E/P的Datasheet PDF文件第2页浏览型号PIC12F635E/P的Datasheet PDF文件第3页浏览型号PIC12F635E/P的Datasheet PDF文件第4页浏览型号PIC12F635E/P的Datasheet PDF文件第5页浏览型号PIC12F635E/P的Datasheet PDF文件第6页浏览型号PIC12F635E/P的Datasheet PDF文件第7页 
PIC12F635/PIC16F636/639  
Data Sheet  
8/14-Pin Flash-Based,  
8-Bit CMOS Microcontrollers  
with nanoWatt Technology  
*8-bit, 8-pin Devices Protected by Microchip’s Low Pin Count Patent: U. S. Patent No. 5,847,450. Additional U.S. and  
foreign patents and applications may be issued or pending.  
© 2005 Microchip Technology Inc.  
Preliminary  
DS41232B  

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