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PIC12F635-E/SN PDF预览

PIC12F635-E/SN

更新时间: 2024-11-26 06:03:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存微控制器
页数 文件大小 规格书
234页 3856K
描述
8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635-E/SN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:3.90 MM, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01Factory Lead Time:13 weeks
风险等级:0.79具有ADC:NO
其他特性:ALSO OPERATES BY 2V MINIMUM SUPPLY AT 4 MHZ地址总线宽度:
位大小:8CPU系列:PIC
最大时钟频率:20 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
I/O 线路数量:6端子数量:8
片上程序ROM宽度:14最高工作温度:125 °C
最低工作温度:-40 °CPWM 通道:NO
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:2/5.5 V认证状态:Not Qualified
RAM(字节):64ROM(单词):1024
ROM可编程性:FLASH座面最大高度:1.75 mm
速度:20 MHz子类别:Microcontrollers
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
uPs/uCs/外围集成电路类型:MICROCONTROLLER, RISCBase Number Matches:1

PIC12F635-E/SN 数据手册

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PIC12F635/PIC16F636/639  
Data Sheet  
8/14-Pin, Flash-Based 8-Bit  
CMOS Microcontrollers  
with nanoWatt Technology  
*8-bit, 8-pin Devices Protected by Microchip’s Low Pin Count Patent: U. S. Patent No. 5,847,450. Additional U.S. and  
foreign patents and applications may be issued or pending.  
© 2007 Microchip Technology Inc.  
DS41232D  

PIC12F635-E/SN 替代型号

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