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PIC12F635-I/SN PDF预览

PIC12F635-I/SN

更新时间: 2024-11-23 06:03:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存微控制器和处理器外围集成电路光电二极管PC时钟
页数 文件大小 规格书
234页 3856K
描述
8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635-I/SN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:3.90 MM, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01Factory Lead Time:8 weeks
风险等级:0.78Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:159622
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:8-Lead(SN) SOIC
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
具有ADC:NO其他特性:ALSO OPERATES BY 2V MINIMUM SUPPLY AT 4 MHZ
地址总线宽度:位大小:8
CPU系列:PIC最大时钟频率:20 MHz
DAC 通道:NODMA 通道:NO
外部数据总线宽度:JESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1I/O 线路数量:6
端子数量:8片上程序ROM宽度:14
最高工作温度:85 °C最低工作温度:-40 °C
PWM 通道:NO封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:2/5.5 V
认证状态:Not QualifiedRAM(字节):64
ROM(单词):1024ROM可编程性:FLASH
座面最大高度:1.75 mm速度:20 MHz
子类别:Microcontrollers最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER, RISC
Base Number Matches:1

PIC12F635-I/SN 数据手册

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PIC12F635/PIC16F636/639  
Data Sheet  
8/14-Pin, Flash-Based 8-Bit  
CMOS Microcontrollers  
with nanoWatt Technology  
*8-bit, 8-pin Devices Protected by Microchip’s Low Pin Count Patent: U. S. Patent No. 5,847,450. Additional U.S. and  
foreign patents and applications may be issued or pending.  
© 2007 Microchip Technology Inc.  
DS41232D  

PIC12F635-I/SN 替代型号

型号 品牌 替代类型 描述 数据表
PIC12F635T-I/SN MICROCHIP

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8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology
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