Datasheet > PI0512HSN

PI0512HSN

更新时间： 2024-11-21 10:13:07

品牌	Logo	应用领域
AMI		光电二极管光电二极管
页数	文件大小	规格书
8页	552K
描述
25-μm-Pitch Wide Aperture Spectroscopic Photodiode Arrays

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PI0512HSN 数据手册

Peripheral

Imaging

Corporation

PI0256HSN, PI0512HSN, PI1024HSN

25-µm-Pitch Wide Aperture Spectroscopic Photodiode Arrays

Engineering Data Sheet

Description

Peripheral Imaging Corporation's HSN series is family

of self-scanning photodiode solid-state linear imaging

22 NC

VSS

VDD

ABG

ADDCAP

TD1

arrays.

These photodiode sensors employ PIC’s

21 VSS

20 START

19 CLK

18 NC

proprietary CMOS Image Sensing Technology to

integrate the sensors into a single monolithic chip.

These sensors are optimally designed for applications

in spectroscopy. Accordingly, these sensors contain a

linear array of photodiodes with an optimized geomet-

rical aspect ratio (25-µm aperture pitch x 2500-µm

aperture width) for helping to maintain mechanical

stability in spectroscopic instruments and for providing

a large light-capturing ability. The family of sensors

consists of photodiode arrays of various lengths, 256,

512, and 1024 pixels.

17 VDD

16 EOS

15 NC

VSS

TD2

14 VSS

13 QOUT

12 VDD

ABD

The HSN photodiode arrays are mounted in 22-pin

ceramic side-brazed dual-in-line packages that fit in

standard DIP sockets. A diagram of its pinout configu-

ration is seen in Figure 1.

Figure 1. Pinout configuration.

Features

Selectable saturation charge capacities. 65-pC

capacity for wider dynamic range. 25-pC for lower

noise readout.

Sensor Characteristics

Wide spectral response (180 – 1000 nm) for UV

and IR response.

NP junction photodiodes with superior resistance

to UV damage.

Low dark current.

Integration time up to 11 seconds at room te m-

perature.

Integration time extended to hours by cooling.

Anti-blooming circuitry.

High linearity.

Low power dissipation (less than 1 mW).

Geometrical structure for enhanced stability and

registration.

The Peripheral Imaging Corporation's self-scanned

HSN photodiodes are spaced on a 25-µm pitch. The

line density is 40 diodes/mm and accordingly the

overall die lengths of the different arrays vary with the

number of photodiodes. For example, the 256-pixel

array is 6.4-mm long, the 512-pixel array is 12.8-mm

long, and the 1024-pixel array is 25.6-mm long. Each

array has four additional dummy photodiodes. On each

side, there are one dark (non-imaging) dummy photo-

diode and one imaging dummy photodiode. The height

of the sensors is 2500 mm. The tall, narrow apertures

make these sensors desirable for use in monochro-

mators and spectrographs.

Standard 22-lead dual-in-line IC package.

Page 1 of 8

March 13, 2002

12 3 4 5 6 7 8

中文翻译

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与PI0512HSN相关器件

型号	品牌	获取价格	描述	数据表
PI0512WS	AMI	获取价格	512-Pixel 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Array
PI0512WSN	AMI	获取价格	50-mm-Pitch Wide Aperture Spectroscopic Photodiode Arrays
PI06D0303A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06D0503A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06D1203A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06D2403A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S0303A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S0503A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S1203A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S2403A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package

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