Datasheet > PI0512WSN

PI0512WSN

更新时间： 2024-11-21 06:00:31

品牌	Logo	应用领域
AMI		光电二极管光电二极管
页数	文件大小	规格书
8页	932K
描述
50-mm-Pitch Wide Aperture Spectroscopic Photodiode Arrays

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PI0512WSN 数据手册

™

Peripheral

PI0128WSN, PI0256WSN, PI0512WSN

50-mm-Pitch Wide Aperture Spectroscopic Photodiode Arrays

Engineering Data Sheet

Imaging

Corporation

Description

Peripheral Imaging Corporation's WSN series is family

of self-scanning photodiode solid-state linear imaging

arrays.

These photodiode sensors employ PIC’s

proprietary CMOS Image Sensing Technology to

integrate the sensors into a single monolithic chip.

These sensors are optimally designed for applications

in spectroscopy. Accordingly, these sensors contain a

linear array of photodiodes with an optimized geomet-

rical aspect ratio (50-mm aperture pitch x 2500-mm

aperture width) for helping to maintain mechanical

stability in spectroscopic instruments and for providing

a large light-capturing ability. The family of sensors

consists of photodiode arrays of various lengths, 128,

256, and 512 pixels.

The WSN photodiode arrays are mounted in 22-pin

ceramic side-brazed dual-in-line packages that fit in

standard DIP sockets. A diagram of its pinout configu-

ration is seen in Figure 1.

Features

Figure 1. Pinout configuration.

•

65-pC saturation capacity for wide dynamic range.

Wide spectral response (180 – 1000 nm) for UV

and IR response.

NP junction photodiodes with superior resistance

to UV damage.

Low dark current.

Integration time up to 9 seconds at room tempera-

ture.

Integration time extended to hours by cooling.

High linearity.

Low power dissipation (less than 1 mW).

Geometrical structure for enhanced stability and

registration.

Sensor Characteristics

•

The Peripheral Imaging Corporation's self-scanned

WSN photodiodes are spaced on a 50-mm pitch. The

line density is 20 diodes/mm and accordingly the

overall die lengths of the different arrays vary with the

number of photodiodes. For example, the 128-pixel

array is 6.4-mm long, the 256-pixel array is 12.8-mm

long, and the 512-pixel array is 25.6-mm long. Each

array has four additional dummy photodiodes. On each

side, there are one dark (non-imaging) dummy photo-

diode and one imaging dummy photodiode. The height

of the sensors is 2500 mm. The tall, narrow apertures

make these sensors desirable for use in monochro-

mators and spectrographs.

•

Standard 22-lead dual-in-line IC package.

Revised March 21, 2002

Page 1 of 8

12 3 4 5 6 7 8

中文翻译

下载PDF

与PI0512WSN相关器件

型号	品牌	获取价格	描述	数据表
PI06D0303A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06D0503A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06D1203A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06D2403A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S0303A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S0503A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S1203A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI06S2403A	DELTA	获取价格	1W DC/DC CONVERTER, High isolation, SIP-Package
PI07018	FENGJUI	获取价格	HIGH CURRENT INDUCTOR-RoHS
PI07018-100M	FENGJUI	获取价格	HIGH CURRENT INDUCTOR-RoHS

与PI0512WSN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

30
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

49

产品中心

服务支持

精选活动

关于我们

帮助中心

PI0512WSN

PI0512WSN 数据手册

与PI0512WSN相关器件

与PI0512WSN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PI0512WSN

PI0512WSN 数据手册

与PI0512WSN相关器件

与PI0512WSN相关文章

您还可以找

您在本页遇到什么问题？