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PHF9NQ20T PDF预览

PHF9NQ20T

更新时间: 2024-10-28 22:26:11
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
9页 115K
描述
N-channel TrenchMOS transistor

PHF9NQ20T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
雪崩能效等级(Eas):93 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):5.2 A最大漏极电流 (ID):5.2 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):21 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHF9NQ20T 数据手册

 浏览型号PHF9NQ20T的Datasheet PDF文件第2页浏览型号PHF9NQ20T的Datasheet PDF文件第3页浏览型号PHF9NQ20T的Datasheet PDF文件第4页浏览型号PHF9NQ20T的Datasheet PDF文件第5页浏览型号PHF9NQ20T的Datasheet PDF文件第6页浏览型号PHF9NQ20T的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
PHX9NQ20T , PHF9NQ20T  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Low on-state resistance  
• Fast switching  
VDSS = 200 V  
ID = 5.2 A  
• Low thermal resistance  
g
RDS(ON) 400 mΩ  
s
GENERAL DESCRIPTION  
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line  
switchedmode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits  
and general purpose switching applications.  
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package  
PINNING  
SOT186A (FPAK)  
SOT186 (FPAK)  
PIN  
DESCRIPTION  
case  
case  
1
2
3
gate  
drain  
source  
case isolated  
1
2 3  
1
2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
200  
200  
± 20  
5.2  
3.3  
21  
V
V
V
A
A
A
W
˚C  
Ths = 25 ˚C; VGS = 10 V  
Ths = 100 ˚C; VGS = 10 V  
Ths = 25 ˚C  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
Ths = 25 ˚C  
25  
150  
- 55  
November 2000  
1
Rev 1.100  

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