Datasheet > PH3134-25M

PH3134-25M

更新时间： 2024-11-18 06:00:23

品牌	Logo	应用领域
泰科 - TE		晶体晶体管脉冲雷达放大器局域网
页数	文件大小	规格书
3页	103K
描述
Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100μs Pulse, 10% Duty

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

PH3134-25M 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.04
Is Samacsys：	N	Base Number Matches：	1

PH3134-25M 数据手册

PH3134-25M

Radar Pulsed Power Transistor

25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty

M/A-COM Products

Released, 10 Jul 07

Outline Drawing

Features

•

NPN silicon microwave power transistors

Common base configuration

Broadband Class C operation

High efficiency inter-digitized geometry

Diffused emitter ballasting resistors

Gold metallization system

Internal input and output impedance matching

Hermetic metal/ceramic package

RoHS compliant

Absolute Maximum Ratings at 25°C

Parameter

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (Peak)

Power Dissipation @ +25°C

Storage Temperature

Junction Temperature

Symbol

V_CES

V_EBO

I_C

Rating

Units

3.0

P_TOT

T_STG

T_J

159

°C

-65 to +200

200

Electrical Specifications: T_C= 25 ± 5°C (Room Ambient )

Parameter

Test Conditions

Frequency

Symbol Min

Max Units

Collector-Emitter Breakdown Voltage I_C= 10mA

BV_CES

I_CES

R_TH(JC)

P_IN

Collector-Emitter Leakage Current

V_CE= 40V

1.5

Thermal Resistance

Input Power

Vcc = 36V, Pout = 25W

F = 3.1, 3.25, 3.4 GHz

1.1

°C/W

4.45

Power Gain

Vcc = 36V, Pout = 25W

F = 3.1, 3.25, 3.4 GHz

G_P

7.5

Collector Efficiency

η_C

Input Return Loss

Vcc = 36V, Pout = 25W

F = 3.1, 3.25, 3.4 GHz

-6

Load Mismatch Tolerance

VSWR-T

2:1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

12 3

中文翻译

下载PDF

与PH3134-25M相关器件

型号	品牌	获取价格	描述	数据表
PH3134-2OL	TE	获取价格	Radar Pulsed Power Transistor, 2OW, 300ms Pulse, 10% Duty 3.1 - 3.4 GHz
PH3134-30S	TE	获取价格	Radar Pulsed Power Transistor, 3OW, lms Pulse, 10% Duty 3.1 - 3.4 GHz
PH3134-55L	TE	获取价格	Radar Pulsed Power Transistor, SW, 300ms Pulse, 10% Duty 3.1 - 3.4 GHz
PH3134-55L	MACOM	获取价格	Bipolar
PH3134-55L_17	TE	获取价格	Radar Pulsed Power Transistor
PH3134-65M	TE	获取价格	Radar Pulsed Power Transistor, 65W, 1OOms Pulse, 10% Duty 3.1 - 3.4 GHz
PH3134-65M_15	TE	获取价格	Radar Pulsed Power Transistor
PH3134-65M_17	TE	获取价格	Radar Pulsed Power Transistor
PH3134-75S	TE	获取价格	Radar Pulsed Power Transistor,75W 1ms Pulse,10% Duty 3.1-3.4GHz
PH3134-9L	TE	获取价格	Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz

与PH3134-25M相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

PH3134-25M

PH3134-25M 技术参数

PH3134-25M 数据手册

与PH3134-25M相关器件

与PH3134-25M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PH3134-25M

PH3134-25M 技术参数

PH3134-25M 数据手册

与PH3134-25M相关器件

与PH3134-25M相关文章

您还可以找

您在本页遇到什么问题？