PH3135-65M
Radar Pulsed Power Transistor
65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
M/A-COM Products
Released, 10 Aug 07
Outline Drawing
Features
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NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
Rating
65
Units
V
3.0
V
7.7
A
PTOT
TSTG
TJ
350
W
°C
°C
-65 to +200
200
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Symbol Min
Max Units
Collector-Emitter Breakdown Voltage IC = 25mA
BVCES
ICES
RTH(JC)
PIN
65
-
-
V
Collector-Emitter Leakage Current
VCE = 36V
5.0
mA
Thermal Resistance
Output Power
Vcc = 36V, Pout = 65W
Vcc = 36V, Pout = 65W
F = 3.1, 3.3, 3.5 GHz
F = 3.1, 3.3, 3.5 GHz
-
-
0.5
°C/W
W
11.6
Power Gain
Vcc = 36V, Pout = 65W
Vcc = 36V, Pout = 65W
F = 3.1, 3.3, 3.5 GHz
F = 3.1, 3.3, 3.5 GHz
GP
75
35
-
-
dB
%
Collector Efficiency
ηC
RL
Input Return Loss
Vcc = 36V, Pout = 65W
Vcc = 36V, Pout = 65W
F = 3.1, 3.3, 3.5 GHz
F = 3.1, 3.3, 3.5 GHz
-
-
-6
dB
-
Load Mismatch Tolerance
VSWR-T
2:1
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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