Datasheet > PH2520U

PH2520U

更新时间： 2024-11-19 11:14:03

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安世 - NEXPERIA		/
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N-channel TrenchMOS ultra low level FETProduction

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PH2520U 数据手册

PH2520U

N-channel TrenchMOS ultra low level FET

Rev. 03 — 2 March 2009

Product data sheet

1. Product profile

1.1 General description

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

Low conduction losses due to low

thermal resistance

on-state resistance

Interfaces directly with low voltage

gate drivers

1.3 Applications

DC-to-DC convertors

Notebook computers

Portable equipment

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 150 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_mb= 25 °C; V_GS= 4.5 V;

see Figure 1; see Figure 3

100

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

62.5

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 4.5 V; I_D= 50 A;

V_DS= 10 V; T_j= 25 °C;

see Figure 11; see Figure 12

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 4.5 V; I_D= 25 A;

T_j= 25 °C; see Figure 9;

see Figure 10

2.1

2.7

mΩ

12 3 4 5 6 7...12

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