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PH1214-110M PDF预览

PH1214-110M

更新时间： 2024-11-20 22:34:23
品牌 Logo 应用领域
泰科 - TE 晶体晶体管脉冲雷达
页数 文件大小 规格书
2页 56K
描述
Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty

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PH1214-110M 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：,Reach Compliance Code：unknown
风险等级：5.03最大集电极电流 (IC)：10 A
配置：Single最高工作温度：200 °C
极性/信道类型：NPN最大功率耗散 (Abs)：300 W
子类别：Other Transistors表面贴装：NO
Base Number Matches：1

PH1214-110M 数据手册

 浏览型号PH1214-110M的Datasheet PDF文件第2页 
PH1214-110M
Radar Pulsed Power Transistor - 110 Watts,  
µ
1.20-1.40 GHz, 150 s Pulse, 10% Duty  
Features  
Outline Drawing1  
•
•
•
•
•
•
•
NPN Silicon Microwave Power Transistor  
Common Base Configuration  
Broadband Class C Operation  
High Efficiency Interdigitated Geometry  
Diffused Emitter Ballasting Resistors  
Gold Metalization System  
Internal Input and Output Impedance Matching  
Description  
M/A-COM’s PH1214-110M is a silicon bipolar NPN power  
transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars  
such as air traffic control and long-range weather radars. De-  
signed for common-base, class C, broadband pulsed power  
applications, the PH1214-110M can produce 110 watts of output  
power with medium pulse length (150µS) at 10 percent duty  
cycle. The transistor is housed in a 2-lead rectangular metal-  
ceramic flange package, with internal input and output  
impedance matching networks. Diffused emitter ballast resis-  
tors and gold metalization assure ruggedness and long-term  
reliability.  
Notes: (unless otherwise specified)  
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)  
Broadband Test Fixture Impedance  
f (GHz)  
Z IF (Ω)  
Z OF (Ω)  
1.20  
1.30  
1.40  
4.7 - j4.4  
4.5 - j3.3  
4.5 - j2.3  
4.4 - j3.3  
3.0 - j2.8  
2.3 - j1.8  
Absolute Maximum Rating at 25°C  
Parameter  
Symbol  
Rating  
Units  
V
Collector-Emitter Voltage  
VCES  
70  
Emitter-Base Voltage  
VEBO  
IC  
3.0  
10.5  
300  
V
A
TEST FIXTURE  
INPUT  
CIRCUIT  
TEST FIXTURE  
OUTPUT  
CIRCUIT  
Collector Current (Peak)  
Total Power Dissipation  
@ +25°C  
PTOT  
W
Storage Temperature  
Tstg  
Tj  
-65 to +200  
200  
°C  
°C  
Z
Z
50  
Ω
50  
Ω
IF  
OF  
Junction Temperature  
Electrical Specifications at 25°C  
Symbol  
BVCES  
ICES  
RTH(JC)  
PO  
Parameter  
Collector-Emitter Breakdown IC = 50 mA  
Collector-Emitter Breakdown VCE = 40 V  
Thermal Resistance  
Output Power  
Power Gain  
Test Conditions  
Min  
70  
-
Max  
-
5.5  
0.50  
-
-
-
Units  
V
mA  
°C/W  
W
dB  
%
dB  
-
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz  
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz  
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz  
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz  
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz  
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz  
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz  
-
110  
7.4  
50  
9
-
-
GP  
Collector Efficiency  
Input Return Loss  
η
RL  
-
VSWR-T Load Mismatch Tolerance  
VSWR-S Load Mismatch Stability  
3:1  
1.5:1  
-
V2.00  
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087  
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
www.macom.com  
AMP and Connecting at a Higher Level are trademarks.  
Specifications subject to change without notice.  
12

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