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PH1214-80M PDF预览

PH1214-80M

更新时间： 2024-11-10 14:53:23
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
3页 138K
描述
Bipolar

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中文翻译

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PH1214-80M 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：compliant
风险等级：5.03Is Samacsys：N
其他特性：WITH EMITTER BALLASTING RESISTORS, HIGH RELIABILITY外壳连接：BASE
最大集电极电流 (IC)：6.4 A配置：SINGLE
最高频带：L BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：185 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PH1214-80M 数据手册

 浏览型号PH1214-80M的Datasheet PDF文件第2页浏览型号PH1214-80M的Datasheet PDF文件第3页 
PH1214-80M  
Radar Pulsed Power Transistor  
80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty  
M/A-COM Products  
Released, 30 May 07  
Outline Drawing  
Features  
•
•
•
•
•
•
•
•
•
NPN silicon microwave power transistors  
Common base configuration  
Broadband Class C operation  
High efficiency inter-digitized geometry  
Diffused emitter ballasting resistors  
Gold metallization system  
Internal input and output impedance matching  
Hermetic metal/ceramic package  
RoHS compliant  
Absolute Maximum Ratings at 25°C  
Parameter  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (Peak)  
Power Dissipation @ +25°C  
Storage Temperature  
Junction Temperature  
Symbol  
VCES  
VEBO  
IC  
Rating  
70  
Units  
V
3.0  
V
6.4  
A
PTOT  
TSTG  
TJ  
220  
W
°C  
°C  
-65 to +200  
200  
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )  
Parameter  
Test Conditions  
Frequency  
Symbol Min  
Max Units  
Collector-Emitter Breakdown Voltage IC = 35mA  
BVCES  
ICES  
70  
-
-
V
Collector-Emitter Leakage Current  
Thermal Resistance  
Output Power  
VCE = 40V  
3.5  
mA  
Vcc = 40V, Pin = 13W  
Vcc = 40V, Pin = 13W  
Vcc = 40V, Pin = 13W  
Vcc = 40V, Pin = 13W  
F = 1.2, 1.3, 1.4 GHz  
F = 1.2, 1.3, 1.4 GHz  
F = 1.2, 1.3, 1.4 GHz  
F = 1.2, 1.3, 1.4 GHz  
RTH(JC)  
POUT  
GP  
-
0.8  
°C/W  
W
80  
7.9  
50  
-
-
-
Power Gain  
dB  
Collector Efficiency  
%
ηC  
Input Return Loss  
Vcc = 40V, Pin = 13W  
Vcc = 40V, Pin = 13W  
Vcc = 40V, Pin = 13W  
F = 1.2, 1.3, 1.4 GHz  
F = 1.2, 1.3, 1.4 GHz  
F = 1.2, 1.3, 1.4 GHz  
RL  
-
-
-9  
dB  
Load Mismatch Tolerance  
Load Mismatch Stability  
VSWR-T  
VSWR-S  
3:1  
-
-
-
1.5:1  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
123

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