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PESD5V0S1BL

更新时间: 2023-09-03 20:40:25
品牌 Logo 应用领域
安世 - NEXPERIA 局域网二极管
页数 文件大小 规格书
13页 201K
描述
Bidirectional ESD protection diodeProduction

PESD5V0S1BL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DFN
包装说明:1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, LEADLESS, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.39
其他特性:LOW CAPACITANCE最大击穿电压:9.5 V
最小击穿电压:5.5 V击穿电压标称值:7.5 V
最大钳位电压:14 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PBCC-N2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:130 W
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD5V0S1BL 数据手册

 浏览型号PESD5V0S1BL的Datasheet PDF文件第2页浏览型号PESD5V0S1BL的Datasheet PDF文件第3页浏览型号PESD5V0S1BL的Datasheet PDF文件第4页浏览型号PESD5V0S1BL的Datasheet PDF文件第5页浏览型号PESD5V0S1BL的Datasheet PDF文件第6页浏览型号PESD5V0S1BL的Datasheet PDF文件第7页 
PESD5V0S1BL  
Low capacitance bidirectional ESD protection diode  
15 May 2018  
Product data sheet  
1. General description  
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in an SOD882  
leadless ultra-small plastic package designed to protect one signal line from the damage caused by  
ESD and other transients.  
2. Features and benefits  
Bidirectional ESD protection of one line  
Max. peak pulse power: PPP = 130 W  
Low clamping voltage: V(CL)R = 14 V  
Ultra low leakage current: IRM = 5 nA  
ESD protection > 30 kV  
IEC 61000-4-2, level 4 (ESD)  
IEC 61000-4-5 (surge); IPP = 12 A  
Ultra small SMD plastic packages  
3. Applications  
Cellular handsets and accessories  
Portable electronics  
Computers and peripherals  
Communication systems  
Audio and video equipment  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
5
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
35  
45  
pF  
 
 
 
 

PESD5V0S1BL 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0S1BL,315 NXP

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