Datasheet > PESD30VF1BBL

PESD30VF1BBL

更新时间： 2024-04-09 19:03:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	205K
描述
Bidirectional ESD protection diodeProduction

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PESD30VF1BBL

Bidirectional ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

V_BR

I_RM

C_d

breakdown voltage

I_R= 10 mA; T_amb= 25 °C

reverse leakage current V_R= 30 V; T_amb= 25 °C

diode capacitance

clamping voltage

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.27

18.5

0.35

V_CL

I_TLP= 8 A; t_p= 100 ns; T_amb= 25 °C

I_TLP= 16 A; t_p= 100 ns; T_amb= 25 °C

I_R= 7.5 A; t_p= 100 ns; T_amb= 25 °C

[1]

R_dyn

dynamic resistance

0.8

[1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.

aaa-036303

aaa-035742

0.5

0.4

(dB)

(pF)

-0.5

0.3

-1.5

-2.5

-3.5

-4.5

0.2

0.1

-40

-20

f (Hz)

V (V)

f = 1 MHz; T_amb= 25 °C

Fig. 3. Insertion loss; typical values

Fig. 4. Capacitance as a function of reverse voltage;

typical values

PESD30VF1BBL

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Product data sheet

25 July 2023

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