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PDTC124TT PDF预览

PDTC124TT

更新时间: 2024-11-15 04:10:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
12页 956K
描述
Low VCEsat (BISS) transistors

PDTC124TT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.13
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTORS
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC124TT 数据手册

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PDTC124TT 替代型号

型号 品牌 替代类型 描述 数据表
PDTC124TT,215 NXP

功能相似

PDTC124T series - NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = open TO-236 3-Pin

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NPN resistor-equipped transistor