是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 其他特性: | BUILT-IN BIAS RESISTORS |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTA144TU,115 | NXP |
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PDTA144T series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open SC-70 3-Pin | |
PDTA144V | NXP |
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PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW | |
PDTA144VE | NXP |
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PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW | |
PDTA144VE | PHILIPS |
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Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | |
PDTA144VK | NXP |
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PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW | |
PDTA144VK | PHILIPS |
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Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, | |
PDTA144VM | NXP |
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PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW | |
PDTA144VM | PHILIPS |
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Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | |
PDTA144VM | NEXPERIA |
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PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmProduction | |
PDTA144VM,315 | NXP |
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PDTA144V series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm DFN 3-Pin |