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PDTA143ZT-Q PDF预览

PDTA143ZT-Q

更新时间: 2024-11-25 17:15:43
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
11页 223K
描述
50 V, 100 mA PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩProduction

PDTA143ZT-Q 数据手册

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PDTA143ZT-Q  
50 V, 100 mA PNP resistor-equipped transistor;  
R1 = 4.7 kΩ, R2 = 47 kΩ  
7 March 2024  
Product data sheet  
1. General description  
PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic  
package.  
2. Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Digital application in automotive and industrial segments  
Cost-saving alternative for BC847/857 series in digital applications  
Controlling IC inputs  
Switching loads  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-50  
V
IO  
output current  
-
-
-100  
6.1  
12  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
Tamb = 25 °C  
[1]  
[1]  
3.3  
8
4.7  
10  
R2/R1  
[1] See section "Test information" for resistor calculation and test conditions  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
Simplified outline  
Graphic symbol  
3
I
input (base)  
O
2
GND  
O
ground (emitter)  
output (collector)  
R1  
I
3
R2  
GND  
1
2
sym003  
SOT23  
 
 
 
 
 
 

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