MOSFET MODULE Dual 50A /500V
PDM505HA
OUTLINE DRAWING
Dimension(mm)
FEATURES
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
108.0
Circuit
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Approximate Weight : 220g
MAXMUM RATINGS
Ratings
Drain-Source Voltage (VGS=0V)
Gate - Source Voltage
Symbol
VDSS
VGSS
PDM505HA
500
Unit
V
V
+/ - 20
Duty=50%
D.C.
50 (Tc=25°C)
35 (Tc=25°C)
100 Tc=25°C)
350 Tc=25°C)
-40 to +150
-40 to +125
2000
Continuous Drain Current
ID
A
Pulsed Drain Current
Total Power Dissipation
IDM
PD
A
W
°C
°C
V
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
T
jw
Tstg
VISO
Module Base to Heatsink
Bus Bar to Main Terminals
3.0
2.0
Mounting Torque
FTOR
N•m
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
VDS=VDSS,VGS=0V
T=125°C, VDS=VDSS,VGS=0V
Min.
-
-
Typ.
-
-
Max.
1.0
4.0
Unit
mA
Zero Gate Voltage Drain Current
IDSS
j
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
VGS(th) VDS=VGS, ID=3mA
2.0
-
3.1
-
110
3.2
30
8.4
1.1
0.24
4.0
0.3
120
3.4
-
-
-
-
V
µA
m-ohm
V
S
nF
IGSS
rDS(on)
VGS=+/- 20V,VDS=0V
VGS=10V, ID=25A
-
-
-
-
-
-
VDS(on) VGS=10V, ID=25A
g
fs
VDS=15V, ID=25A
C
ies
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=25V,VGS=0V,f=1MHz
nF
nF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDD= 1/2VDSS
ID=25A
VGS= -5V, +10V
RG= 5 ohm
-
-
-
-
92
110
250
68
-
-
-
-
ns
t
f
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
Symbol
IS
ISM
VSD
trr
Qr
Test Condition
Min.
Typ.
-
-
Max.
35
100
1.5
-
Unit
A
A
V
ns
µC
D.C.
-
-
-
-
-
-
IS=50A
-
80
0.18
IS=50A, -dis/dt=100A/µs
-
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
0.36
2.0
Unit
MOS FET
Diode
-
-
-
-
-
-
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
R
th(j-c)
°C/W
R
th(c-f)
Mounting surface flat, smooth, and greased
0.1