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PDM505HA PDF预览

PDM505HA

更新时间: 2024-10-28 04:10:51
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描述
MOSFET MODULE Dual 50A/500V

PDM505HA 数据手册

 浏览型号PDM505HA的Datasheet PDF文件第2页浏览型号PDM505HA的Datasheet PDF文件第3页 
MOSFET MODULE Dual 50A /500V  
PDM505HA  
OUTLINE DRAWING  
Dimension(mm)  
FEATURES  
* Dual MOS FETs Cascaded Circuit  
* Prevented Body Diodes of MOSFETs by  
SBDs, and Ultra Fast Recovery Diodes  
Connected in Parallel  
108.0  
Circuit  
* 300KHz High Speed Switching Possible  
TYPICAL APPLICATIONS  
* Power Supply for the Communications and  
the Induction Heating  
Approximate Weight : 220g  
MAXMUM RATINGS  
Ratings  
Drain-Source Voltage (VGS=0V)  
Gate - Source Voltage  
Symbol  
VDSS  
VGSS  
PDM505HA  
500  
Unit  
V
V
+/ - 20  
Duty=50%  
D.C.  
50 (Tc=25°C)  
35 (Tc=25°C)  
100 Tc=25°C)  
350 Tc=25°C)  
-40 to +150  
-40 to +125  
2000  
Continuous Drain Current  
ID  
A
Pulsed Drain Current  
Total Power Dissipation  
IDM  
PD  
A
W
°C  
°C  
V
Operating Junction Temperature Range  
Storage Temperature Range  
Isolation Voltage Terminals to Base AC, 1 min.)  
T
jw  
Tstg  
VISO  
Module Base to Heatsink  
Bus Bar to Main Terminals  
3.0  
2.0  
Mounting Torque  
FTOR  
Nm  
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)  
Characteristic  
Symbol  
Test Condition  
VDS=VDSS,VGS=0V  
T=125°C, VDS=VDSS,VGS=0V  
Min.  
-
-
Typ.  
-
-
Max.  
1.0  
4.0  
Unit  
mA  
Zero Gate Voltage Drain Current  
IDSS  
j
Gate-Source Threshold Voltage  
Gate-Source Leakage Current  
Static Drain-Source On-Resistance  
Drain-Source On-Voltage  
Forward Transconductance  
Input Capacitance  
VGS(th) VDS=VGS, ID=3mA  
2.0  
-
3.1  
-
110  
3.2  
30  
8.4  
1.1  
0.24  
4.0  
0.3  
120  
3.4  
-
-
-
-
V
µA  
m-ohm  
V
S
nF  
IGSS  
rDS(on)  
VGS=+/- 20V,VDS=0V  
VGS=10V, ID=25A  
-
-
-
-
-
-
VDS(on) VGS=10V, ID=25A  
g
fs  
VDS=15V, ID=25A  
C
ies  
Output Capacitance  
Reverse Transfer Capacitance  
Coss  
Crss  
VDS=25V,VGS=0V,f=1MHz  
nF  
nF  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
td(on)  
tr  
td(off)  
VDD= 1/2VDSS  
ID=25A  
VGS= -5V, +10V  
RG= 5 ohm  
-
-
-
-
92  
110  
250  
68  
-
-
-
-
ns  
t
f
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)  
Characteristic  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery  
Symbol  
IS  
ISM  
VSD  
trr  
Qr  
Test Condition  
Min.  
Typ.  
-
-
Max.  
35  
100  
1.5  
-
Unit  
A
A
V
ns  
µC  
D.C.  
-
-
-
-
-
-
IS=50A  
-
80  
0.18  
IS=50A, -dis/dt=100A/µs  
-
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
0.36  
2.0  
Unit  
MOS FET  
Diode  
-
-
-
-
-
-
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Heatsink  
R
th(j-c)  
°C/W  
R
th(c-f)  
Mounting surface flat, smooth, and greased  
0.1  

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