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PDM41256LA8SOITR PDF预览

PDM41256LA8SOITR

更新时间: 2024-11-22 23:27:07
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 254K
描述
x8 SRAM

PDM41256LA8SOITR 数据手册

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PDM41256  
256K Static RAM  
32K x 8-Bit  
1
2
Description  
Features  
The PDM41256 is a high-performance CMOS static  
RAM organized as 32,768 x 8 bits. Writing to this  
device is accomplished when the write enable (WE)  
and the chip enable (CE) inputs are both LOW.  
Reading is accomplished when WE remains HIGH  
and CE and OE are both LOW.  
High-speed access times  
Com’l: 7, 8, 10, 12 and 15ns  
Ind’l: 8, 10, 12 and 15ns  
(use 15ns for slower designs)  
Low power operation (typical)  
- PDM41256SA  
Active: 475 mW  
Standby: 100 mW  
- PDM41256LA  
Active: 425mW  
The PDM41256 operates from a single +5V power  
supply and all the inputs and outputs are fully TTL-  
compatible. The PDM41256 comes in two versions:  
the standard power version PDM41256SA and the  
low power version PDM41256LA. Both versions are  
functionally the same and differ only in their power  
consumption.  
4
Standby: 25 mW  
Single +5V (±10%) power supply  
TTL-compatible inputs and outputs  
Packages  
5
The PDM41256 is available in a 28-pin plastic TSOP  
(I) and a 28-pin 300-mil plastic SOJ.  
Plastic SOJ (300 mil) - SO  
Plastic TSOP (I) - T  
6
Functional Block Diagram  
7
A
0
Decoder  
Memory  
8
Addresses  
Matrix  
A 14  
9
• • • • •  
I/O0  
Input  
Data  
Control  
Column I/O  
10  
11  
12  
I/O7  
CE  
WE  
OE  
Rev. 4.4 - 4/29/98  
1

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