Datasheet > PDM41256LA12TI

PDM41256LA12TI

更新时间： 2024-11-18 22:26:43

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
8页	76K
描述
256K Static RAM 32K x 8-Bit

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PDM41256LA12TI 数据手册

PDM41256

256K Static RAM

32K x 8-Bit

Description

Features

The PDM41256 is a high-performance CMOS static

RAM organized as 32,768 x 8 bits. This product is

produced in Paradigm’s proprietary CMOS

technology which offers the designer the highest

speed parts. Writing to this device is accomplished

when the write enable (WE) and the chip enable

(CE) inputs are both LOW. Reading is accomplished

when WE remains HIGH and CE and OE are both

LOW.

■ High-speed access times

Com’l: 7, 8, 10, 12, and 15 ns

Ind’l: 8, 10, 12, and 15 ns

■ Low power operation (typical)

- PDM41256SA

Active: 400 mW

Standby: 150 mW

- PDM41256LA

Active: 350 mW

Standby: 25 mW

The PDM41256 operates from a single +5V power

supply and all the inputs and outputs are fully TTL-

compatible. The PDM41256 comes in two versions,

the standard power version PDM41256SA and a low

power version the PDM41256LA. The two versions

are functionally the same and only differ in their

power consumption.

■ Single +5V (±10%) power supply

■ TTL-compatible inputs and outputs

■ Packages

Plastic SOJ (300 mil) - TSO

Plastic TSOP - T

The PDM41256 is available in a 28-pin plastic TSOP

and a 28-pin 300-mil plastic SOJ.

Functional Block Diagram

Rev. 2.0 - 7/17/96

3-33

12 3 4 5 6 7 8

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