5秒后页面跳转
PDM34078SA10QA PDF预览

PDM34078SA10QA

更新时间: 2024-02-02 15:48:24
品牌 Logo 应用领域
IXYS 静态存储器
页数 文件大小 规格书
14页 312K
描述
SRAM

PDM34078SA10QA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:QFP, QFP100,.7X.9Reach Compliance Code:unknown
风险等级:5.92最长访问时间:10 ns
最大时钟频率 (fCLK):60 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:32端子数量:100
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:105 °C
最低工作温度:-40 °C组织:32KX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装等效代码:QFP100,.7X.9
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified最大待机电流:0.003 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.23 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUADBase Number Matches:1

PDM34078SA10QA 数据手册

 浏览型号PDM34078SA10QA的Datasheet PDF文件第4页浏览型号PDM34078SA10QA的Datasheet PDF文件第5页浏览型号PDM34078SA10QA的Datasheet PDF文件第6页浏览型号PDM34078SA10QA的Datasheet PDF文件第8页浏览型号PDM34078SA10QA的Datasheet PDF文件第9页浏览型号PDM34078SA10QA的Datasheet PDF文件第10页 
PDM34078  
Recommended DC Operating Conditions  
Symbol  
Description  
Min.  
Typ.  
Max.  
Unit  
1
2
V
V
V
Supply Voltage  
3.0  
3.0  
0
3.3  
3.3  
0
3.6  
3.6  
0
V
V
CC  
Supply voltage  
CCQ  
SS  
Supply Voltage  
V
Commercial  
Ambient Temperature  
0
25  
70  
°C  
3
DC Electrical Characteristics (V = 3.3V ± 0.3V, All Temperature Ranges)  
CC  
Symbol  
|I |  
Description  
Test Conditions  
= 0V to V  
Min.  
Max.  
Unit  
4
Input Leakage Current  
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
Input HIGH Voltage  
V
–2  
–2  
2
2
µA  
µA  
V
LI  
IN  
CC  
|I  
|
Outputs Disabled, V = 0V to V  
I/O CC  
LO  
V
V
V
V
V
= Min., I = 8 mA  
0.4  
OL  
CC  
CC  
OL  
= Min., I = –5 mA  
2.4  
2.0  
V
OH  
IH  
OH  
5
Vcc+0.3  
V
(1)  
V
Input LOW Voltage  
–0.3  
0.8  
V
IL  
NOTES: 1. Undershoots to –2.0 for 10 ns are allowed once per cycle.  
2. MODE, FT and ZZ pins have an internal pullup and exhibit an input leakage current of ±400 µA.  
7
Power Supply Characteristics  
Symbol Description  
Test Conditions  
-6 ns  
-7 ns  
-8 ns  
-10 ns  
-12 ns  
Unit  
I
Active Supply Current  
Device Deselected  
350  
300  
250  
230  
210  
mA  
8
CC  
SB  
V
V or V  
I
= 0  
IN  
IL  
IH, I/O  
I
Standby Current:  
Standby Current:  
Standby Current:  
Device Deselected  
V or V 0 MHz  
20  
3
20  
3
20  
3
20  
3
20  
3
mA  
mA  
mA  
mA  
V
IN  
IL  
IH,  
All inputs static  
9
I
I
I
Device Deselected  
SB1  
SB2  
SB3  
V
0.2V or V – 0.2V  
CC  
IN  
All inputs static, 0 MHz  
Device Deselected  
60  
3
55  
3
50  
3
45  
3
40  
3
10  
11  
12  
V
V or V  
IL IH,  
IN  
All inputs static  
Sleep Mode  
Standby Current:  
Device Deselected  
ZZ V – 0.2V  
CCQ  
Rev 1.0 - 5/01/98  
7