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PDM31024LL85ST PDF预览

PDM31024LL85ST

更新时间: 2024-02-16 04:27:52
品牌 Logo 应用领域
IXYS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 221K
描述
Standard SRAM, 128KX8, 85ns, CMOS, PDSO32

PDM31024LL85ST 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified最大待机电流:0.000006 A
最小待机电流:1.5 V子类别:SRAMs
最大压摆率:0.03 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUALBase Number Matches:1

PDM31024LL85ST 数据手册

 浏览型号PDM31024LL85ST的Datasheet PDF文件第2页浏览型号PDM31024LL85ST的Datasheet PDF文件第3页浏览型号PDM31024LL85ST的Datasheet PDF文件第4页浏览型号PDM31024LL85ST的Datasheet PDF文件第5页浏览型号PDM31024LL85ST的Datasheet PDF文件第6页浏览型号PDM31024LL85ST的Datasheet PDF文件第7页 
PRELIMINARY  
PDM31024LL  
AC Electrical Characteristics  
Description  
-70  
-85  
-100  
WRITE Cycle  
Sym Min. Max. Min. Max. Min. Max. Units  
WRITE cycle time  
t
t
70  
70  
70  
0
85  
85  
85  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
100  
100  
100  
0
WC  
CW  
Chip enable to end of write  
Address valid to end of write  
Address setup time  
t
AW  
t
AS  
Address hold from end of write  
Write pulse width  
t
t
0
0
0
AH  
50  
40  
0
50  
40  
0
50  
40  
0
WP  
Data setup time  
t
DS  
DH  
Data hold time  
t
(4,5)  
(4,5)  
Write disable to output in low Z  
t
t
5
5
5
LZWE  
Write enable to output in high Z  
30  
30  
30  
HZWE  
NOTES: (For two previous Electrical Characteristics tables)  
1. The device is continuously selected. Chip Enable is held in its active state.  
2. The address is valid prior to or coincident with the latest occuring Chip Enable.  
3. At any given temperature and voltage condition, t  
4. This parameter is sampled.  
is less than t  
.
HZCE  
LZCE  
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±500 mV from steady state voltage.  
Ordering Information  
XXXXX  
X
XX  
Speed  
X
X
X
Device Type Power  
Package  
Type  
Process  
Temp. Range  
Preferred  
Shipping  
Container  
Blank Tubes  
TR  
TY  
Tape & Reel  
Tray  
Blank  
Commercial (0° to +70°C)  
T
ST  
32-pin Plastic TSOP (I)  
32-pin Plastic STSOP (I)  
70  
85  
100  
LL  
Low Power  
PDM31024 - 1 Meg (128Kx8) Static RAM  
Faster Memories for a Faster World ™  
8
Rev. 0.0 - 4/03/98  

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