Datasheet > PD166105GS-E1-AY

PD166105GS-E1-AY

更新时间： 2024-11-05 12:32:03

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
17页	134K
描述
MOS INTEGRATED CIRCUIT

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PD166105GS-E1-AY 数据手册

Preliminary Data Sheet

PD166105GS

MOS INTEGRATED CIRCUIT

Description

R07DS0604EJ0100

Rev.1.00

Jan 19, 2012

The PD166105 is a high-voltage, dual output, and N-channel low-side intelligent power device with built-in

overtemperature-protection, overcurrent-limitation, and disconnection-detection circuits.

It protects itself by shutting down or limiting current when it detects overtemperature or overcurrent.

Output MOS shut down is restarted automatically by cooling of the chip temperature.

When load is normal, a diagnostic output is produced on detection of a flyback voltage.

When load is disconnected, diagnostic output stops.

Features



High voltage dual output low side driver

Built-in overcurrent limitation circuits and overtemperature protection circuits

 Shuts down by overtemperature detection

 Restarts automatically after cooling



Built-in dynamic clamping circuit (100 V Min.)

Built-in disconnection-detection circuit

 A diagnostic output is produced on detection of a flyback voltage.

 Diagnostic output stops on disconnection.

Low on-state resistance

High temperature operation (Tch = 175°C Max.)

Small 20-pin SOP package



Application



Injector driver

Ordering Information

Part No.

Lead Plating

Packing

Tape 2500 p/reel

Package

PD166105GS-E1-AY

PD166105GS-E2-AY

20-pin plastic SOP (7.62 mm (300))

R07DS0604EJ0100 Rev.1.00

Jan 19, 2012

Page 1 of 15

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