Datasheet > PD1450-35T52

PD1450-35T52

更新时间： 2024-11-13 03:42:55

品牌	Logo	应用领域
其他 - ETC		光电二极管
页数	文件大小	规格书
1页	26K
描述
InGaAs PIN-PD

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PD1450-35T52 数据手册

PD1450-35T52 InGaAs PIN-PD

PD1450-35T52 is InGaAs PIN-photodiode.

This PIN-photodiode is consists of a large chip

with 0.35x0.35mm active area mounted

on the TO-18 stem and is hermetical sealed

by metal can with flat lens.

Outer dimension(Unit:mm)

These devices are designed to be easy of setting up optically

with a wide angle of half sensitivity of ±40°.

Features

1) High Reliability

2) High Response

Specifications

1) Product Name InGaAs PIN Photo-Diode

2) Type No.

3) Chip

PD1450-35T52

(1) Active Area

4) Package

(1) Type

0.35mmx0.35mm

TO-18

(2) Lens

Glass Flat Lens (f 2.4)

(2) Cap

Gold Plated

Absolute Maximum Ratings

Item

Symbol

V(BR)R

TOPR

TSTG

TSOL

Maximum Rated Value

Unit

°C

Reverse Breakdown Voltage

Operating Temperature

Storage Temperature

Soldering Temperature

-20 ~ +90

-30 ~ +100

260

‡ Pulse Soldering condition: Soldering condition must be completed within 2 seconds at 240°C

Electro-Optical Characteristics [25°C]

Item

Symbol

Condition

VR=0V,l P=1450nm

VR=1V

Minimum Typical Maximum unit

Photo Responsivity

Photo Current

Dark Current

0.9

A/W

uA(‡ 1)

100

l P

Q1/2

1000

Spectral Responsivity (Peak)

Half Angle of Sensitivity

Total Capacitance

VR=0V

f=1MHz,VR=1V

1600

deg.

±40

Rise/Fall Time(10%~90%)

RL=1KW,VR=1V

‡ Measured by calibrated tool

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