Datasheet > PBYR745B/T3

PBYR745B/T3

更新时间： 2024-12-02 10:06:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
6页	41K
描述
7.5A, 45V, SILICON, RECTIFIER DIODE

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PBYR745B/T3 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR745B, PBYR745D series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 40 V/ 45 V

I_F(AV)= 7.5 A

V_F≤ 0.57 V

tab

GENERAL DESCRIPTION

Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage,

high frequency switched mode power supplies.

The PBYR745B series is supplied in the SOT404 surface mounting package.

The PBYR745D series is supplied in the SOT428 surface mounting package.

PINNING

SOT404

SOT428

DESCRIPTION

no connection

cathode¹

tab

anode

tab

cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYR7

40B

45B

40D

45D

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_mb≤ 114 ˚C

I_F(AV)

Average rectified forward

current

square wave; δ = 0.5; T_mb≤ 136 ˚C

7.5

I_FRM

I_FSM

Repetitive peak forward

current

square wave; δ = 0.5; T_mb≤ 136 ˚C

Non-repetitive peak forward t = 10 ms

PBYR7..B

PBYR7..D

135

150

100

110

current

t = 8.3 ms

t = 10 ms

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.

July 1998

Rev 1.200

12 3 4 5 6

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