PBYR745X

更新时间： 2024-11-30 22:09:03

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
5页	36K
描述
Rectifier diodes schottky barrier

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PBYR745X 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

PBYR745X series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Low leakage, platinum barrier,

schottky rectifier diodes in a full pack

plastic envelope featuring low

forward voltage drop, absence of

stored charge. and guaranteed

reverse surgecapability. The devices

areintendedforuseinswitchedmode

power supplies and high frequency

circuits in general where low

conductionand zero switchinglosses

are important.

SYMBOL

PARAMETER

MAX. MAX. MAX. UNIT

PBYR7-

35X

40X

45X

V_RRM

Repetitive peak reverse

voltage

V_F

I_F(AV)

Forward voltage

0.57

7.5

0.57

7.5

0.57

7.5

Average forward current

PINNING - SOD113

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

case

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

MAX.

UNIT

-35

-40

-45

V_RRM

V_RWM

V_R

Repetitive peak reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_hs≤ 128 ˚C

I_F(AV)

Average forward current

square wave; δ = 0.5;

7.5

_hs≤ 123 ˚C

I_F(RMS)

I_FRM

RMS output current

Repetitive peak forward current t = 25 µs; δ = 0.5;

10.6

_hs≤ 123 ˚C

I_FSM

Non-repetitive peak forward

current

t = 10 ms

100

110

t = 8.3 ms

sinusoidal T_j= 125 ˚C prior

to surge; with reapplied

V_RRM(max)

I²t

I²t for fusing

t = 10 ms

A²s

I_RRM

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RSM

Non-repetitive peak reverse

current

Storage temperature

Operating junction temperature

t_p= 100 µs

T_stg

T_j

-65

175

150

˚C

August 1996

Rev 1.000

12 3 4 5

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