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PBYR3045PT

更新时间: 2024-11-28 22:09:07
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网
页数 文件大小 规格书
5页 34K
描述
Rectifier diodes schottky barrier

PBYR3045PT 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.35
应用:POWER二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:45 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

PBYR3045PT 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
schottky barrier  
PBYR3045PT series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Dual, low leakage, platinum barrier,  
schottky rectifier diodes in a plastic  
envelope featuring low forward  
voltage drop and absence of stored  
charge. These devices can withstand  
reverse voltage transients and have  
guaranteed reverse surge capability.  
The devices are intended for use in  
switched mode power supplies and  
high frequency circuits in general  
where low conduction and zero  
switching losses are important.  
SYMBOL  
PARAMETER  
MAX. MAX. MAX. UNIT  
PBYR30- 35PT 40PT  
45PT  
45  
VRRM  
Repetitive peak reverse  
voltage  
Forward voltage  
Output current (both  
diodes conducting)  
35  
40  
V
VF  
IO(AV)  
0.60  
30  
0.60  
30  
0.60  
30  
V
A
PINNING - SOT93  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
Anode 1 (a)  
tab  
a1  
1
a2  
3
2
Cathode (k)  
Anode 2 (a)  
3
k
2
tab Cathode (k)  
1
2
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS MIN.  
MAX.  
UNIT  
-35  
35  
35  
35  
-40  
40  
40  
40  
-45  
45  
45  
45  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
Tmb 136 ˚C  
IO(AV)  
Output current (both diodes  
square wave; δ = 0.5;  
-
30  
A
conducting)1  
T
mb 130 ˚C  
IO(RMS)  
IFRM  
RMS forward current  
-
-
43  
30  
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;  
per diode  
Tmb 130 ˚C  
IFSM  
Non-repetitive peak forward  
current per diode  
t = 10 ms  
-
-
180  
200  
A
A
t = 8.3 ms  
sinusoidal Tj = 125 ˚C prior  
to surge; with reapplied  
VRWM(max)  
I2t  
I2t for fusing  
t = 10 ms  
-
-
162  
2
A2s  
A
IRRM  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
per diode.  
IRSM  
Non-repetitive peak reverse  
current per diode.  
tp = 100 µs  
-
2
A
Tstg  
Tj  
Storage temperature  
-65  
-
175  
150  
˚C  
˚C  
Operating junction temperature  
1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.  
August 1996  
1
Rev 1.100  

PBYR3045PT 替代型号

型号 品牌 替代类型 描述 数据表
MBR3045PT ONSEMI

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