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PBYR240CTT/R PDF预览

PBYR240CTT/R

更新时间: 2024-11-23 21:02:39
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
5页 34K
描述
2A, 40V, SILICON, RECTIFIER DIODE

PBYR240CTT/R 技术参数

生命周期:Obsolete包装说明:R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G4
最大非重复峰值正向电流:6.6 A元件数量:2
相数:1端子数量:4
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

PBYR240CTT/R 数据手册

 浏览型号PBYR240CTT/R的Datasheet PDF文件第2页浏览型号PBYR240CTT/R的Datasheet PDF文件第3页浏览型号PBYR240CTT/R的Datasheet PDF文件第4页浏览型号PBYR240CTT/R的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR245CT series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• low profile surface mounting  
package  
VR = 40 V/ 45 V  
IO(AV) = 2 A  
a1  
1
a2  
3
k
2
VF 0.45V  
GENERAL DESCRIPTION  
PINNING  
SOT223  
Dual, common cathode schottky  
PIN  
DESCRIPTION  
anode 1  
cathode  
4
rectifier diodes in  
a
plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
1
2
3
anode 2  
cathode  
The PBYR245CT series is supplied  
in the surface mounting SOT223  
package.  
tab  
2
3
1
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR2  
40CT  
45CT  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
40  
45  
45  
45  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
40  
40  
VR  
T
sp 74 ˚C  
-
-
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
square wave; δ = 0.5; Tsp 119 ˚C  
2
2
IFRM  
IFSM  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5; Tsp 119 ˚C  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
6
6.6  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
150  
˚C  
˚C  
Tstg  
Storage temperature  
- 40  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-a  
Thermal resistance junction pcb mounted, minimum footprint  
to ambient pcb mounted, pad area as in fig:1  
-
-
156  
70  
-
-
K/W  
K/W  
July 1998  
1
Rev 1.400  

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