PBYR245CT

更新时间： 2024-11-18 22:09:07

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
5页	43K
描述
Rectifier diodes Schottky barrier

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中文翻译

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PBYR245CT 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR245CT series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• low profile surface mounting

package

V_R= 40 V/ 45 V

I_O(AV)= 2 A

V_F≤ 0.45V

GENERAL DESCRIPTION

PINNING

SOT223

Dual, common cathode schottky

DESCRIPTION

anode 1

cathode

rectifier diodes in

plastic

envelope. Intended for use as

output rectifiers in low voltage, high

frequency switched mode power

supplies.

anode 2

cathode

The PBYR245CT series is supplied

in the surface mounting SOT223

package.

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYR2

40CT

45CT

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_sp≤ 74 ˚C

I_O(AV)

Average rectified output

current (both diodes

conducting)

square wave; δ = 0.5; T_sp≤ 119 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5; T_sp≤ 119 ˚C

Non-repetitive peak forward t = 10 ms

6.6

current per diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

˚C

T_stg

Storage temperature

- 40

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-a}

Thermal resistance junction pcb mounted, minimum footprint

to ambient pcb mounted, pad area as in fig:1

156

K/W

July 1998

Rev 1.400

12 3 4 5

中文翻译

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