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PBY303R PDF预览

PBY303R

更新时间: 2024-12-01 13:12:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管IOT
页数 文件大小 规格书
2页 127K
描述
Rectifier Diode, 1 Element, 35A, 200V V(RRM)

PBY303R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.5 V湿度敏感等级:1
最大非重复峰值正向电流:500 A元件数量:1
最高工作温度:175 °C最大输出电流:35 A
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
Base Number Matches:1

PBY303R 数据手册

 浏览型号PBY303R的Datasheet PDF文件第2页 
1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307  
1N1183 ... 1N1190, 1N3766, 1N3768,  
PBY301 ... PB307  
Silicon-Power-Rectifiers  
Silizium-Leistungs-Gleichrichter  
Version 2007-05-09  
Nominal Current  
Nennstrom  
35 A  
50 ... 1000 V  
DO-5  
13.6  
Ø 4+0.5  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
Metal case  
Metallgehäuse  
Type  
Weight approx.  
Gewicht ca.  
6 g  
SW17  
M6  
Standard polarity: Cathode to stud / Kathode am Gewinde  
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R)  
Standard packaging: bulk  
Standard Lieferform: lose im Karton  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Repetive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
1N1183 = PBY301  
1N1184 = PBY302  
1N1186 = PBY303  
1N1188 = PBY304  
1N1190 = PBY305  
1N3766 = PBY306  
1N3768 = PBY307  
50  
100  
200  
400  
600  
800  
1000  
60  
120  
240  
480  
720  
1000  
1200  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
IFAV  
IFRM  
IFSM  
i2t  
35 A  
110 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
450/500 A  
1000 A2s  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-65...+175°C  
-65...+175°C  
1
Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 

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