Datasheet > PB5B5BX

PB5B5BX

更新时间： 2024-05-23 22:22:30

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	250K
描述
PDFN 2x2

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中文翻译

获取价格

数据手册

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PB5B5BX 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

PB5B5BX

NIKO-SEM

PDFN 2x2S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-20V

R_DS(ON)

I_D

22mΩ

-7.9A

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-20

UNITS

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

V_GS

±12

T_A= 25 °C

T_A= 70 °C

-7.9

I_D

I_DM

-6.3

-32

T_A= 25 °C

T_A= 70 °C

2.2

P_D

1.4

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

°C／W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Coppe.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

-20

V_GS= 0V, I_D= -250A

V_DS= V_GS, I_D= -250A

V_DS= 0V, V_GS= ±12V

V_DS= -16V, V_GS= 0V

-0.65 -0.9 -1.2

±100 nA

-1

A

-10

Zero Gate Voltage Drain Current

I_DSS

V_DS= -10V, V_GS= 0V, T_J= 55 °C

V_GS= -2.5V, I_D= -2A

17.5

14.8

Drain-Source On-State

Resistance¹

V_GS= -4.5V, I_D= -2.5A

V_GS= -10V, I_D= -2.5A

V_DS= -10V, I_D= -2.5A

mΩ

R_DS(ON)

Forward Transconductance¹

g_fs

H-15-4

REV1.1

12 3 4

中文翻译

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