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PB600BX PDF预览

PB600BX

更新时间: 2024-05-23 22:23:27
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
4页 351K
描述
PDFN 2x2

PB600BX 数据手册

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PB600BX  
N-Channel Enhancement Mode  
Field Effect Transistor  
NIKO-SEM  
PDFN 2x2S  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
30V  
RDS(ON)  
ID  
D
12mΩ  
10A  
G
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
S
• Optimized Gate Charge to Minimize Switching Losses.  
Applications  
Protection Circuits Applications.  
Logic/Load Switch Circuits Applications.  
Computer for DC to DC Converters Applications.  
G : GATE  
D : DRAIN  
S : SOURCE  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
30  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±20  
TA = 25 °C  
TA = 70 °C  
10  
Continuous Drain Current  
ID  
8.5  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
27  
18  
L = 0.1mH  
TA = 25 °C  
TA = 70 °C  
EAS  
16.2  
2.4  
mJ  
W
Power Dissipation3  
PD  
1.5  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
t 10s  
Steady-State  
SYMBOL  
TYPICAL  
MAXIMUM  
52  
UNITS  
Junction-to-Ambient2  
RJA  
°CW  
71.7  
1Pulse width limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.  
3The Power dissipation is based on RJA t 10s value.  
M-9-1  
REV1.1  
1

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