Datasheet > PB606BX

PB606BX

更新时间： 2024-05-23 22:23:28

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	238K
描述
PDFN 2x2

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中文翻译

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数据手册

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PB606BX 数据手册

PB606BX

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

PDFN 2x2S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

18mΩ

7.3A

G : GATE

D : DRAIN

S : SOURCE

100% RG Test , 100% UIL Test

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

Gate-Source Voltage

V_GS

±20

T_A= 25 °C

T_A= 70 °C

7.3

Continuous Drain Current

I_D

5.9

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

12.8

8.2

L = 0.1mH

T_A= 25 °C

T_A= 70 °C

E_AS

1.5

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

°C／W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Coppe.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

_GS= 0V, I_D= 250A

_DS= V_GS, I_D= 250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

1.3 1.75 2.3

V_DS= 0V, V_GS= ±20V

V_DS= 24V, V_GS= 0V

±100 nA

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 20V, V_GS= 0V, T_J= 55 °C

_GS= 4.5V, I_D= 6A

Drain-Source On-State

Resistance¹

mΩ

R_DS(ON)

g_fs

V_GS= 10V, I_D= 7A

V_DS= 10V, I_D= 7A

Forward Transconductance¹

F-16-5

REV1.0

12 3 4

中文翻译

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