Datasheet > PB5C5JW

PB5C5JW

更新时间： 2024-05-23 22:23:32

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	297K
描述
PDFN 2x2

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中文翻译

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数据手册

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PB5C5JW 数据手册

Dual P-Channel Enhancement

Mode Field Effect Transistor

PB5C5JW

NIKO-SEM

PDFN 2x2S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-20V

R_DS(ON)

I_D

85mΩ

-3.1A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode with ESD Protected.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

1 : S1.

4 : S2.

2 : G1. 5 : G2.

3 : D2. 6 : D1.

100% RG Test , 100% UIL Test

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

-20

±12

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

V_GS

T_A= 25 °C

T_A= 70 °C

-3.1

I_D

I_DM

-2.5

-12

T_A= 25 °C

T_A= 70 °C

1.3

P_D

0.85

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

°C／W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Coppe.

I-26-4

REV1.0

12 3 4

中文翻译

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