Datasheet > PB502CW

PB502CW

更新时间： 2024-11-21 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
7页	387K
描述
PDFN 2x2

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中文翻译

获取价格

数据手册

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PB502CW 数据手册

N- & P-Channel Enhancement Mode Field

Effect Transistor

PB502CW

NIKO-SEM

PDFN 2x2S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSSR_DS(ON)

I_D

30mΩ

75mΩ

N-Channel

P-Channel

20V

-20V

-3.8A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

• DC Motor for BLDC Applications.

1 : S1. 4 : S2.

100% UIS Tested

100% Rg Tested

2 : G1. 5 : G2.

3 : D2. 6 : D1.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

N-Channel P-Channel UNITS

±8

-20

±8

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

-3.8

-3

I_D

Continuous Drain Current

Pulsed Drain Current¹

4.8

1.9

1.2

I_DM

-15

1.9

1.2

T_A= 25 °C

T_A= 70 °C

Power Dissipation³

P_D

Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

N-ch

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient²

t ≦10s

P-ch

N-ch

P-ch

°C / W

R_JA

Junction-to-Ambient²

Steady-State

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

REV 1.0

H-40-2

12 3 4 5 6 7

中文翻译

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