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PB51

更新时间： 2024-11-20 10:18:15
品牌 Logo 应用领域
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页数 文件大小 规格书
4页 142K
描述
Power Booster Amplifier

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中文翻译

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PB51 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SFM包装说明：,
针数：12Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.57Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER最大输入失调电压：1750000 µV
JESD-30 代码：R-PSFM-T12JESD-609代码：e3
负供电电压上限：-150 V标称负供电电压 (Vsup)：-60 V
功能数量：1端子数量：12
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified标称压摆率：100 V/us
供电电压上限：150 V标称供电电压 (Vsup)：60 V
表面贴装：NO温度等级：MILITARY
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

PB51 数据手册

 浏览型号PB51的Datasheet PDF文件第2页浏览型号PB51的Datasheet PDF文件第3页浏览型号PB51的Datasheet PDF文件第4页 
PB51  
ProductInnova ti o From  
Power Booster Amplifier  
FEATURES  
•ꢀWIDEꢀSUPPLYꢀRANGEꢀ—ꢀ±15Vꢀtoꢀ±150V  
•ꢀHIGHꢀOUTPUTꢀCURRENTꢀ—ꢀ  
ꢀ ꢀꢀꢀ1.5AꢀContinuousꢀ(PB51),ꢀ2.0AꢀContinuousꢀ(PB51A)  
•ꢀVOLTAGEꢀANDꢀCURRENTꢀGAIN  
•ꢀHIGHꢀSLEWꢀ—ꢀ  
50V/µsꢀMinimumꢀ(PB51)  
ꢀ ꢀ 75V/µsꢀMinimumꢀ(PB51A)  
•ꢀPROGRAMMABLEꢀOUTPUTꢀCURRENTꢀLIMIT  
•ꢀHIGHꢀPOWERꢀBANDWIDTHꢀ—ꢀ320ꢀkHzꢀMinimum  
•ꢀLOWꢀQUIESCENTꢀCURRENTꢀ—ꢀ12mAꢀTypical  
•ꢀEVALUATIONꢀKITꢀ—ꢀEK29  
12-PINꢀSIP  
PACKAGEꢀSTYLEꢀDP  
Formed leads available. See package styles ED & EE  
APPLICATIONS  
•ꢀHIGHꢀVOLTAGEꢀINSTRUMENTATION  
EQUIVALENTꢀSCHEMATIC  
+VS  
8
•ꢀELECTROSTATICꢀTRANSDUCERSꢀ&ꢀDEFLECTION  
•ꢀPROGRAMMABLEꢀPOWERꢀSUPPLIESꢀUPꢀTOꢀ280VꢀP-P  
Q2  
Q1  
DESCRIPTION  
The PB51 is a high voltage, high current amplifier designed  
to provide voltage and current gain for a small signal, general  
purpose op amp. Including the power booster within the feed-  
back loop of the driver amplifier results in a composite amplifier  
with the accuracy of the driver and the extended output voltage  
range and current capability of the booster.The PB51 can also  
be used without a driver in some applications, requiring only  
an external current limit resistor to function properly.  
The output stage utilizes complementary MOSFETs, pro-  
viding symmetrical output impedance and eliminating second  
breakdown limitations imposed by BipolarTransistors.Internal  
feedback and gainset resistors are provided for a pin-strapable  
gain of 3.Additional gain can be achieved with a single external  
resistor. Compensation is not required for most driver/gain  
configurations, but can be accomplished with a single external  
capacitor. Enormous flexibility is provided through the choice  
of driver amplifier, current limit, supply voltage, voltage gain,  
and compensation.  
IN  
1
6
Q4  
Q5  
Q6  
GAIN  
OUT  
ILIM  
12  
9
3.1K  
Q7  
2
5
COM  
CC  
Q11  
Q8  
Q9  
Q10  
–VS  
11  
This hybrid circuit utilizes a beryllia (BeO) substrate, thick  
film resistors, ceramic capacitors and semiconductor chips to  
maximize reliability, minimize size and give top performance.  
Ultrasonically bonded aluminum wires provide reliable inter-  
connections at all operating temperatures. The 12-pin Power  
SIP package is electrically isolated.  
EXTERNALꢀCONNECTIONS  
1
2
3
4
5
6
7
8
9
10  
11  
12  
TYPICALꢀAPPLICATION  
CF  
IN  
NC  
NC NC  
NC  
-VS  
+VS  
RCL  
RG  
COM  
CC  
RF  
+15V  
+Vs  
IN  
RCL  
RI  
VIN  
OUT  
OP  
AMP  
OUT  
PB51  
COM  
CC  
RG  
RL  
–15V  
–Vs  
Copyright © Cirrus Logic, Inc. 2009  
(All Rights Reserved)  
JUN 2009  
APEX − PB51UREVE  
http://www.cirrus.com  
1234

中文翻译

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