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P855CH40D5DO PDF预览

P855CH40D5DO

更新时间: 2024-11-12 19:48:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 3770A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element

P855CH40D5DO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:300 mA
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:3770 A
断态重复峰值电压:4000 V重复峰值反向电压:4000 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

P855CH40D5DO 数据手册

 浏览型号P855CH40D5DO的Datasheet PDF文件第2页 

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Silicon Controlled Rectifier, 3770A I(T)RMS, 4000V V(DRM), 4000V V(RRM), 1 Element
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P855CH42D4D IXYS

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Silicon Controlled Rectifier, 3770A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element