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P6SMBJ540C PDF预览

P6SMBJ540C

更新时间： 2024-11-13 20:09:11
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
4页 502K
描述
Trans Voltage Suppressor Diode, 600W, 459V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SURFACE MOUNT PACKAGE-2

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P6SMBJ540C 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214AA包装说明：SURFACE MOUNT PACKAGE-2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.79其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：567 V最小击穿电压：513 V
击穿电压标称值：540 V最大钳位电压：740 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：2最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：459 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

P6SMBJ540C 数据手册

 浏览型号P6SMBJ540C的Datasheet PDF文件第2页浏览型号P6SMBJ540C的Datasheet PDF文件第3页浏览型号P6SMBJ540C的Datasheet PDF文件第4页 
Silicon Avalanche Diodes  
600W Surface Mount Transient Voltage Supressors  
®
RoHS  
P6SMBJ Series  
FEATURES  
• RoHS compliant  
• For surface mounted applications in order to optimize  
board space  
• Low profile package  
• Built-in strain relief  
• Glass passivated junction  
• Low lead inductance  
• Excellent clamping capability  
• Repetition Rate (duty cycle): 0.01%  
• Fast response time: typically less than 1.0ps from 0 Volts to  
BV for unidirectional types  
• Typical IR less than 1 µmA above 10V  
MAXIMURATINS AND CHARACTERISTICS  
@25˚C AMBT TEMPERATURE (unless otherw ise noted)  
• High Temperature soldering: 250˚C/10 seconds at terminals  
PAMETE
VALUE  
SYMBOL  
UNIT  
Agency Approvals: Recognized under the Components Program  
of Underwriters Laboratories.  
eak e power Dissipation on  
1000µs waveform  
te 1,2, FIG.1)  
Min  
600  
P
Watts  
PPM  
Agency File Number: E128662  
eak pulse current of on 10\1000µs  
waveform (note 1, FIG.3)  
I
PPM  
Amps  
Amps  
SEE TABLE 1  
100  
Peak forward Surge Current, 8.3ms  
Single Half SIne Wave Superimposed  
on Rated Load, (JEDEC Method)  
(note 2.3)  
I
PSM  
Operating junction and Storage  
Temperature Range  
T
T
°C  
-55 to +150  
j, sTG  
Note 1. Non-repetitive current pulse, per Fig.3 and derated above  
T = 25˚C per Fig.2  
Note 2. Mounted on 5.0mm (0.03mm thick) Copper Pads to each  
A
2
terminal  
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,  
Duty cycle= 4 pulses per minute  
ORDERING INFORMATION  
C A  
P6SMBJ  
Voltage  
Bi-Directional  
Mechanical Specifications:  
Weight:  
Case:  
0.003ounce, 0.093 gram  
JEDEC DO-214AA Molded Plastic over  
glass passivated junction  
Any  
5% Voltage Tolerance  
Mounting Position:  
Polarity:  
Color band denotes cathode except  
Bidirectional  
Tape and reeled (3000 pcs)  
Terminal:  
Solder Plated solderable per  
MIL-STD-750, Method 2026  
Standard Packaging: 12mm tape (EIA STF RS-481)  
266  
www. lit t elf us e. c om  
1234

中文翻译

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P6SMBJ540C 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB540C LITTELFUSE

完全替代

 P6SMB系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。

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