Datasheet > P6SMBJ160A

P6SMBJ160A

更新时间： 2024-11-12 12:03:47

品牌	Logo	应用领域
亞昕 - YEASHIN		二极管脉冲光电二极管局域网
页数	文件大小	规格书
5页	110K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 440 Volts 6 00 Watt Peak Power Pulse

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P6SMBJ160A 数据手册

DATA SHEET

SEMICONDUCTOR

P6SMBJ Series

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE - 5.0 to 440 Volts 600 Watt Peak Power Pulse

SMB/DO-214AA Unit:inch(mm)

FEATURES

ΘFor surface mounted applications in order to optimize board space.

ΘLow profile package

.083(2.11)

.075(1.91)

ΘBuilt-in strain relief

.155(3.94)

.130(3.30)

ΘGlass passivated junction

ΘLow inductance

ΘHigh temperature soldering : 260 C /10 seconds at terminals

ΘPlastic package has Underwriters Laboratory Flammability

Classification 94V-O

.185(4.70)

.160(4.06)

.012(.305)

.006(.152)

ΘHigh temperature soldering : 260^OC / 10 seconds at terminals

ΘPb free product at available : 99% Sn above meet RoHS

environment substance directive request

.096(2.44)

.083(2.13)

.012(.31)

.006(.15)

MECHANICAL DATA

.050(1.27)

.030(0.76)

.008(.203)

.002(.051)

ΘCase: JEDEC DO-214AA,Molded plastic over passivated junction.

ΘTerminals: Solder plated,solderable per MIL-STD-750,

Method 2026

.220(5.59)

.200(5.08)

ΘPolarity: Color band denotes positive end (cathode)

ΘStandard Packaging:12mm tape (EIA-481)

ΘWeight: 0.003 ounce, 0.093 gram

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types P6SMBJ5.0 thru types P6SMBJ220.

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.

For Capacitive load derate current by 20%.

RATING

SYMBOL

VALUE

UNITS

Peak Power Dissipation at TA=25°C, TP=1ms(Note 1,2,5)Fig.1

Peak Forward Surge Current 8.3ms single half sine-wave

Superimposed on rated load (JEDEC Method)(Notes2,3)

Peak Pulse Current on 10/1000s waveform(Note 1)Fig.3

Operating and Storage Temperature Range

NOTES:

PPPM

600

100

Watts

IFSM

Amps

IPPM

See Table 1

-55 to +150

Amps

°C

TJ, TSTG

1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 OC per Fig. 2.

2. Mounted on 5.0mm2 (0.13mm thick) land areas.

3. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

http://www.yeashin.com

REV.03 20130403

12 3 4 5

中文翻译

下载PDF

与P6SMBJ160A相关器件

型号	品牌	获取价格	描述	数据表
P6SMBJ160A-LFR	FRONTIER	获取价格	600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
P6SMBJ160AP	MCC	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress
P6SMBJ160AS	PANJIT	获取价格	SMB
P6SMBJ160A-T1	WTE	获取价格	Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMBJ160AT3	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
P6SMBJ160A-T3	WTE	获取价格	600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
P6SMBJ160A-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMBJ160C	CHENG-YI	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
P6SMBJ160C	YEASHIN	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 440 Volts 6 00 Watt Peak Power
P6SMBJ160C	WTE	获取价格	600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS

与P6SMBJ160A相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMBJ160A

P6SMBJ160A 数据手册

与P6SMBJ160A相关器件

与P6SMBJ160A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMBJ160A

P6SMBJ160A 数据手册

与P6SMBJ160A相关器件

与P6SMBJ160A相关文章

您还可以找

您在本页遇到什么问题？